電容(rong)器投切(qie)方法(fa)現狀下關(guan)鍵有(you)下列(lie)幾種

伴(ban)隨著低壓無(wu)功補償行業的(de)持續探索(suo)，投(tou)切(qie)(qie)技術性(xing)的(de)不(bu)斷提高(gao)，電(dian)容器(qi)(qi)投(tou)切(qie)(qie)方法現(xian)狀下關鍵(jian)有：交(jiao)流接觸器(qi)(qi)（contactor)投(tou)切(qie)(qie)電(dian)容器(qi)(qi)、復合開關投(tou)切(qie)(qie)電(dian)容器(qi)(qi)、晶閘（zhá)管投(tou)切(qie)(qie)電(dian)容器(qi)(qi)。

交流接(jie)觸器(qi)（contactor)投(tou)切(qie)電(dian)(dian)容(rong)(rong)器(qi)： 其(qi)原理(principle)是當(dang)交流接(jie)觸器(qi)的磁鐵線圈(winding)接(jie)電(dian)(dian)源后，會(hui)造(zao)成較(jiao)強的電(dian)(dian)磁場(界定:傳送商品(pin)間(jian)磁場功效的場)，使靜鐵芯造(zao)成電(dian)(dian)磁感應吸(xi)附力(li)吸(xi)引住銜(xián)鐵，并(bing)推動斷路(lu)器(qi)姿勢，做到(dao)導通合閉的實際(ji)效果，這(zhe)類投(tou)切(qie)電(dian)(dian)源開關在電(dian)(dian)容(rong)(rong)器(qi)投(tou)切(qie)的一瞬間(jian)非(fei)常(chang)容(rong)(rong)易造(zao)成浪涌，會(hui)導致斷路(lu)器(qi)電(dian)(dian)弧焊接(jie)，出現損壞(huai)或(huo)是過補狀況，立即危害到(dao)無功功率(lv)補償的可信(xin)性。

復合(he)(he)(he)開關(guan)投(tou)切(qie)(qie)電(dian)(dian)(dian)容(rong)(rong)器：先加晶閘(zha)（zhá)管(guan)(guan)過(guo)零投(tou)切(qie)(qie)原(yuan)理(li)(principle)，資金投(tou)入電(dian)(dian)(dian)容(rong)(rong)器，再(zai)合(he)(he)(he)閉磁保(bao)持繼電(dian)(dian)(dian)器（relay)，晶體閘(zha)流管(guan)(guan)撤(che)出，電(dian)(dian)(dian)容(rong)(rong)器在磁保(bao)持繼電(dian)(dian)(dian)器（relay)合(he)(he)(he)閉標(biao)準下運作 ，摘(zhai)除也是如(ru)此。投(tou)切(qie)(qie)全過(guo)程中(zhong)無涌流、過(guo)電(dian)(dian)(dian)壓情況的(de)產生，投(tou)切(qie)(qie)電(dian)(dian)(dian)源開關(guan)不(bu)發燙(tang)。眾升高(gao)新(xin)科技用(yong)心(xin)產品研發的(de)新(xin)式智(zhi)能(neng)化(hua)(intelligence)復合(he)(he)(he)開關(guan)，運用(yong)可控硅20ms內電(dian)(dian)(dian)流量(Electron flow)可負載(overload)10倍額定電(dian)(dian)(dian)壓的(de)特(te)點，過(guo)電(dian)(dian)(dian)流投(tou)切(qie)(qie)，再(zai)用(yong)磁保(bao)持繼電(dian)(dian)(dian)器（relay)合(he)(he)(he)閉，應用(yong)周期時(shi)間(lifetime)達到100萬次數(shu)，操縱(zong)（control)方法多種多樣（RS485和 12V），靠譜型高(gao)，平穩（表述(shu):牢固穩定；沒有(you)變化(hua))性(The stability of)強(qiang)(qiang)，擁(yong)有(you) 強(qiang)(qiang)力的(de)銷售市場用(yong)戶評價(public praise)。

晶體閘（zhá)流管投(tou)切(qie)電(dian)(dian)容器：選用(yong)可(ke)(ke)控硅做為(wei)實行元器件，電(dian)(dian)容器排序開(kai)展(zhan)投(tou)切(qie)，可(ke)(ke)控硅做為(wei)無觸點開(kai)關(guan)，能迅(xun)速導通，不會有(you)電(dian)(dian)孤及噪音(yin)，投(tou)切(qie)全過(guo)程無涌流、過(guo)電(dian)(dian)壓(ya)，可(ke)(ke)以信賴(lai)，應用(yong)周(zhou)期時(shi)間(lifetime)長。晶閘管(silicon)投(tou)切(qie)電(dian)(dian)源(yuan)開(kai)關(guan)做為(wei)我企(qi)業自主(zhu)創新(innovate)型商品(pin)(pin)(product)的(de)(de)經典作品(pin)(pin)，可(ke)(ke)以在導通角的(de)(de)標(biao)準下迅(xun)速開(kai)展(zhan)電(dian)(dian)容器的(de)(de)投(tou)切(qie)，動態性(xing)響(xiang)應速度在1個周(zhou)期時(shi)間（20ms）以內，能保持迅(xun)速、的(de)(de)追(zhui)蹤賠償，使底壓(ya)動態性(xing)低壓(ya)無功補償的(de)(de)產品(pin)(pin)研發、制造(Produce)變成實際。